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BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
Sillicon Planar Zener Diodes Low profile surface-mount package e3 Zener and surge current specification Low leakage current Excellent stability High temperature soldering: 260 C/10 sec. at terminals * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * * * * * *
17249
Mechanical Data
Case: JEDEC DO-219AB Weight: approx. 15 mg (SMF(R)) Plastic case
Packaging codes/options: GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Power dissipation Test condition TL = 80 C TA = 25 C Non-repetitive peak pulse power 100 s square pulse2) dissipation 10/1000 s waveform (BZD27C7V5P to BZD27-C100P)2) 10/1000 s waveform (BZD27C110P to BZD27-C200P)2)
1) 2)
Symbol Ptot Ptot PZSM PRSM PRSM
Value 2.3 0.8
1)
Unit W W W W W
300 150 100
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads ( 40 m thick) TJ = 25 C prior to surge
Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient Thermal resistance junction to lead Maximum junction temperature Storage temperature range
1)
Test condition air1)
Symbol RthJA RthJL Tj TS
Value 180 30 150 - 55 to + 150
Unit K/W K/W C C
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads ( 40 m thick)
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Document Number 85810 Rev. 1.8, 13-Apr-05 Test condition IF = 0.2 A Symbol VF Min Typ. Max 1.2 Unit V www.vishay.com 1
BZD27C3V6P to BZD27C200P
Vishay Semiconductors Electrical Characteristics
When used as voltage regulator diodes (TJ = 25 C unless otherwise noted) Partnumber Marking Code Working Voltage1) VZ @ IZT V min BZD27C3V6P BZD27C3V9P BZD27C4V3P BZD27C4V7P BZD27C5V1P BZD27C5V6P BZD27C6V2P BZD27C6V8P BZD27C7V5P BZD27C8V2P BZD27C9V1P BZD27C10P BZD27C11P BZD27C12P BZD27C13P BZD27C15P BZD27C16P BZD27C18P BZD27C20P BZD27C22P BZD27C24P BZD27C27P BZD27C30P BZD27C33P BZD27C36P BZD27C39P BZD27C43P BZD27C47P BZD27C51P BZD27C56P BZD27C62P BZD27C68P BZD27C75P BZD27C82P BZD27C91P BZD27C100P BZD27C110P BZD27C120P BZD27C130P BZD27C150P BZD27C160P BZD27C180P BZD27C200P
1)
Differential Resistance rdif @ IZ typ 4 4 4 3 3 2 2 1 1 1 2 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 25 25 25 25 30 30 60 60 80 80 110 130 150 180 200 max 8 8 7 7 6 4 3 3 2 2 4 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 200 250 250 300 300 350 400 500
Temperature Coefficient Z @ IZ %/C min -0.14 -0.14 -0.12 -0.1 -0.08 -0.04 -0.01 0 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 max -0.04 -0.04 -0.02 0 0.02 0.04 0.06 0.07 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13
Test Current IZT mA 100 100 100 100 100 100 100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5
Reverse Current at Reverse Voltage IR A max 100 50 25 10 5 10 5 10 50 10 10 7 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 3 3 3 5 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 VR V
max 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96 106 116 127 141 156 171 191 212
D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 H0 H1 H2
3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 153 168 188
Pulse test: tp 5 ms.
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Document Number 85810 Rev. 1.8, 13-Apr-05
BZD27C3V6P to BZD27C200P
Vishay Semiconductors Electrical Characteristics
When used as protection diodes (TJ = 25 C unless otherwise noted) Partnumber Rev. Breakdown Voltage V(BR)R at Itest V min BZD27C7V5P BZD27C8V2P BZD27C9V1P BZD27C10P BZD27C11P BZD27C12P BZD27C13P BZD27C15P BZD27C16P BZD27C18P BZD27C20P BZD27C22P BZD27C24P BZD27C27P BZD27C30P BZD27C33P BZD27C36P BZD27C39P BZD27C43P BZD27C47P BZD27C51P BZD27C56P BZD27C62P BZD27C68P BZD27C75P BZD27C82P BZD27C91P BZD27C100P BZD27C110P BZD27C120P BZD27C130P BZD27C150P BZD27C160P BZD27C180P BZD27C200P
1)
Test Current Itest mA
Temperature Coefficient
Clamping Voltage
Reverse Current at Stand-Off Voltage IR A max 1500 1200 100 20 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 at VWM V 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160
Z @ Itest %/C min max 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09
VC V max 11.3 12.3 13.3 14.8 15.7 17 18.9 20.9 22.9 25.6 28.4 31 33.8 38.1 42.2 46.2 50.1 54.1 60.7 65.5 70.8 78.6 86.5 94.4 103.5 114 126 139 139 152 169 187 205 229 254
at IRSM1) A 13.3 12.2 11.3 10.1 9.6 8.8 7.9 7.2 6.6 5.9 5.3 4.8 4.4 3.9 3.6 3.2 3 2.8 2.5 2.3 2.1 1.9 1.7 1.6 1.5 1.3 1.2 1.1 0.72 0.65 0.59 0.53 0.48 0.43 0.39
7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 153 168 188
100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5
Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 s pulse); see Fig. 5.
Document Number 85810 Rev. 1.8, 13-Apr-05
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BZD27C3V6P to BZD27C200P
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
PRSM-Max. Pulse Power Dissipation ( W )
10.00
160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 VZnom - Zener Voltage ( V )
I F - Forward Current ( A )
Typ. VF
Max. VF
1.00
0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
17411
VF - Forward Voltage ( V )
17414
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
C D - Typ. Junction Capacitance ( pF )
10000 C5V1P 1000 C6V8P C12P C18P
IRSM (%) 100 90
t1 = 10 s t2 = 1000 s
100 C27P C200P 0.0 0.5 1.0 1.5 2.0 2.5 VR - Reverse Voltage (V) 3.0 C51P
50
10 t1
17415
10
t t2
17412
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
3.0
P -Power Dissipation ( W ) tot
2.5 2.0 1.5 1.0 0.5 0.0 0
tie point temperature
ambient temperature
25
50
75
100
125
150
17413
Tamb - Ambient Temperature ( C )
Figure 3. Power Dissipation vs. Ambient Temperature
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Document Number 85810 Rev. 1.8, 13-Apr-05
BZD27C3V6P to BZD27C200P
Vishay Semiconductors Package Dimensions in mm (Inches)
0.85 (0.033) 0.35 (0.014)
3.9 (0.152) 3.5 (0.137) 5
0.99 (0.039) 0.97 (0.038)
0.16 (0.006)
5
Z
Detail Z enlarged
Cathode Band Top View
1.9 (0.074) 1.7 (0.066) 0.10 max
1.2 (0.047) 0.8 (0.031)
2.9 (0.113) 2.7 (0.105) ISO Method E
Mounting Pad Layout
1.6 (0.062) 1.3 (0.051)
1.4 (0.055)
17247
Document Number 85810 Rev. 1.8, 13-Apr-05
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BZD27C3V6P to BZD27C200P
Vishay Semiconductors Blistertape for SMF
PS
18513
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Document Number 85810 Rev. 1.8, 13-Apr-05
BZD27C3V6P to BZD27C200P
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85810 Rev. 1.8, 13-Apr-05
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